KTB1369 Bipolar Transistor

Characteristics of KTB1369 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -180 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 70 to 240
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of KTB1369

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTB1369 transistor can have a current gain of 70 to 240. The gain of the KTB1369O will be in the range from 70 to 140, for the KTB1369Y it will be in the range from 120 to 240.

Complementary NPN transistor

The complementary NPN transistor to the KTB1369 is the KTD2061.

Replacement and Equivalent for KTB1369 transistor

You can replace the KTB1369 with the 2SA1668, 2SA1859A, 2SB940A, MJE15033, MJE15033G, MJE5850, MJE5850G, MJE5851 or MJE5851G.
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