KTB1369 Bipolar Transistor
Characteristics of KTB1369 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -180 V
- Collector-Base Voltage, max: -200 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -2 A
- Collector Dissipation: 20 W
- DC Current Gain (hfe): 70 to 240
- Transition Frequency, min: 100 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-220F
Pinout of KTB1369
Classification of hFE
Complementary NPN transistor
Replacement and Equivalent for KTB1369 transistor
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