2SD610-Q Bipolar Transistor

Characteristics of 2SD610-Q Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 200 V
  • Collector-Base Voltage, max: 250 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 2 A
  • Collector Dissipation: 25 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 5 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SD610-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD610-Q transistor can have a current gain of 100 to 200. The gain of the 2SD610 will be in the range from 40 to 200, for the 2SD610-R it will be in the range from 60 to 120, for the 2SD610-S it will be in the range from 40 to 80.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD610-Q might only be marked "D610-Q".

Complementary PNP transistor

The complementary PNP transistor to the 2SD610-Q is the 2SB630-Q.

Replacement and Equivalent for 2SD610-Q transistor

You can replace the 2SD610-Q with the 2SC2898, 2SC3310, 2SC4242, 2SC4382, 2SD772A, 2SD772B, 2SD792A, 2SD792B, BUX84, MJE13070, MJE15032, MJE15032G, MJE15034 or MJE15034G.
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