2SD1196 Bipolar Transistor

Characteristics of 2SD1196 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 110 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 1500
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SD1196

Here is an image showing the pin diagram of this transistor.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1196 might only be marked "D1196".

Replacement and Equivalent for 2SD1196 transistor

You can replace the 2SD1196 with the 2SD1830, MJF6388 or MJF6388G.
If you find an error please send an email to mail@el-component.com