BD537J Bipolar Transistor

Characteristics of BD537J Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 50 W
  • DC Current Gain (hfe): 30 to 75
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BD537J

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BD537J transistor can have a current gain of 30 to 75. The gain of the BD537 will be in the range from 40 to 0, for the BD537K it will be in the range from 40 to 100.

Complementary PNP transistor

The complementary PNP transistor to the BD537J is the BD538J.

Replacement and Equivalent for BD537J transistor

You can replace the BD537J with the 2N6100, 2N6101, 2N6488, 2N6488G, BD709, BD711, BD743B, BD743C, BD799, BD801, BD809, BD909, BD911, BDT93, BDT93F, BDT95, BDT95F, BDX77, MJF3055 or MJF3055G.
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