BDX63A Bipolar Transistor

Characteristics of BDX63A Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 90 W
  • DC Current Gain (hfe): 1000
  • Transition Frequency, min: 7 MHz
  • Operating and Storage Junction Temperature Range: -55 to +200 °C
  • Package: TO-3

Pinout of BDX63A

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDX63A is the BDX62A.

Replacement and Equivalent for BDX63A transistor

You can replace the BDX63A with the 2N6385, BDX63B, BDX63C, BDX65A, BDX65B, BDX65C, BDX67A, BDX67B, BDX67C, BDX69A, BDX69B, BDX69C, MJ1001, MJ11014, MJ11014G, MJ11016, MJ11016G, MJ11030, MJ11030G, MJ11032, MJ11032G, MJ3001, MJ4034, MJ4035, TIP601, TIP602, TIP641 or TIP642.
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