TIP642 Bipolar Transistor

Characteristics of TIP642 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 10 A
  • Collector Dissipation: 175 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -55 to +200 °C
  • Package: TO-3

Pinout of TIP642

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the TIP642 is the TIP647.

Replacement and Equivalent for TIP642 transistor

You can replace the TIP642 with the BDX65B, BDX65C, BDX67B, BDX67C, BDX69B, BDX69C, MJ11016, MJ11016G, MJ11032, MJ11032G, MJ4035 or TIP602.
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