BDX63C Bipolar Transistor

Characteristics of BDX63C Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 140 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 90 W
  • DC Current Gain (hfe): 1000
  • Transition Frequency, min: 7 MHz
  • Operating and Storage Junction Temperature Range: -55 to +200 °C
  • Package: TO-3

Pinout of BDX63C

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDX63C is the BDX62C.

Replacement and Equivalent for BDX63C transistor

You can replace the BDX63C with the BDX65C, BDX67C, BDX69C, MJ11016, MJ11016G, MJ11032 or MJ11032G.
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