BDX63B Bipolar Transistor

Characteristics of BDX63B Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 90 W
  • DC Current Gain (hfe): 1000
  • Transition Frequency, min: 7 MHz
  • Operating and Storage Junction Temperature Range: -55 to +200 °C
  • Package: TO-3

Pinout of BDX63B

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDX63B is the BDX62B.

Replacement and Equivalent for BDX63B transistor

You can replace the BDX63B with the BDX63C, BDX65B, BDX65C, BDX67B, BDX67C, BDX69B, BDX69C, MJ11016, MJ11016G, MJ11032, MJ11032G, MJ4035, TIP602 or TIP642.
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