BDX67C Bipolar Transistor

Characteristics of BDX67C Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 16 A
  • Collector Dissipation: 150 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -55 to +200 °C
  • Package: TO-3

Pinout of BDX67C

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDX67C is the BDX66C.

Replacement and Equivalent for BDX67C transistor

You can replace the BDX67C with the BDX69C, MJ11016, MJ11016G, MJ11032 or MJ11032G.
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