BDX63 Bipolar Transistor

Characteristics of BDX63 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 90 W
  • DC Current Gain (hfe): 1000
  • Transition Frequency, min: 7 MHz
  • Operating and Storage Junction Temperature Range: -55 to +200 °C
  • Package: TO-3

Pinout of BDX63

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDX63 is the BDX62.

Replacement and Equivalent for BDX63 transistor

You can replace the BDX63 with the 2N6384, 2N6385, BDX63A, BDX63B, BDX63C, BDX65, BDX65A, BDX65B, BDX65C, BDX67, BDX67A, BDX67B, BDX67C, BDX69, BDX69A, BDX69B, BDX69C, MJ1000, MJ1001, MJ11012, MJ11012G, MJ11014, MJ11014G, MJ11016, MJ11016G, MJ11028, MJ11028G, MJ11030, MJ11030G, MJ11032, MJ11032G, MJ3000, MJ3001, MJ4033, MJ4034, MJ4035, TIP600, TIP601, TIP602, TIP640, TIP641 or TIP642.
If you find an error please send an email to mail@el-component.com