BDX65A Bipolar Transistor
Characteristics of BDX65A Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 80 V
- Collector-Base Voltage, max: 80 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 12 A
- Collector Dissipation: 117 W
- DC Current Gain (hfe): 1000
- Operating and Storage Junction Temperature Range: -55 to +200 °C
- Package: TO-3
Pinout of BDX65A
Complementary PNP transistor
Replacement and Equivalent for BDX65A transistor
If you find an error please send an email to mail@el-component.com