MJ1001 Bipolar Transistor

Characteristics of MJ1001 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 90 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of MJ1001

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJ1001 is the MJ901.

Replacement and Equivalent for MJ1001 transistor

You can replace the MJ1001 with the 2N6385, BDX63A, BDX63B, BDX63C, BDX65A, BDX65B, BDX65C, BDX67A, BDX67B, BDX67C, BDX69A, BDX69B, BDX69C, MJ11014, MJ11014G, MJ11016, MJ11016G, MJ11030, MJ11030G, MJ11032, MJ11032G, MJ3001, MJ4034, MJ4035, TIP601, TIP602, TIP641 or TIP642.
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