BDX65 Bipolar Transistor

Characteristics of BDX65 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 12 A
  • Collector Dissipation: 117 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -55 to +200 °C
  • Package: TO-3

Pinout of BDX65

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDX65 is the BDX64.

Replacement and Equivalent for BDX65 transistor

You can replace the BDX65 with the BDX65A, BDX65B, BDX65C, BDX67, BDX67A, BDX67B, BDX67C, BDX69, BDX69A, BDX69B, BDX69C, MJ11012, MJ11012G, MJ11014, MJ11014G, MJ11016, MJ11016G, MJ11028, MJ11028G, MJ11030, MJ11030G, MJ11032, MJ11032G, MJ4033, MJ4034 or MJ4035.
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