KTA968AO Bipolar Transistor
Characteristics of KTA968AO Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -180 V
- Collector-Base Voltage, max: -180 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -1.5 A
- Collector Dissipation: 25 W
- DC Current Gain (hfe): 70 to 140
- Transition Frequency, min: 100 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-220
- Electrically Similar to the Popular 2SA968AO transistor
Pinout of KTA968AO
Classification of hFE
Complementary NPN transistor
Replacement and Equivalent for KTA968AO transistor
If you find an error please send an email to mail@el-component.com