KTB1369O Bipolar Transistor

Characteristics of KTB1369O Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -180 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 70 to 140
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of KTB1369O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTB1369O transistor can have a current gain of 70 to 140. The gain of the KTB1369 will be in the range from 70 to 240, for the KTB1369Y it will be in the range from 120 to 240.

Complementary NPN transistor

The complementary NPN transistor to the KTB1369O is the KTD2061O.

Replacement and Equivalent for KTB1369O transistor

You can replace the KTB1369O with the 2SA1009, 2SA1668, 2SA1859A, 2SB630, 2SB940A, 2SB940A-Q, FJP1943, FJPF1943, MJE15033, MJE15033G, MJE5850, MJE5850G, MJE5851 or MJE5851G.
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