2SA1306B-O Bipolar Transistor

Characteristics of 2SA1306B-O Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -200 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 70 to 140
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SA1306B-O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1306B-O transistor can have a current gain of 70 to 140. The gain of the 2SA1306B will be in the range from 70 to 240, for the 2SA1306B-Y it will be in the range from 120 to 240.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1306B-O might only be marked "A1306B-O".

Replacement and Equivalent for 2SA1306B-O transistor

You can replace the 2SA1306B-O with the 2SA1006A, 2SA1006B, 2SA1009, 2SA1009A, 2SA1668, 2SA968B, 2SA968BO, 2SB630, FJP1943, FJPF1943, MJE15033, MJE15033G, MJE5850, MJE5850G, MJE5851, MJE5851G, MJE5852 or MJE5852G.
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