KSA1010Y Bipolar Transistor
Characteristics of KSA1010Y Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -100 V
- Collector-Base Voltage, max: -100 V
- Emitter-Base Voltage, max: -7 V
- Collector Current − Continuous, max: -7 A
- Collector Dissipation: 40 W
- DC Current Gain (hfe): 100 to 200
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-220
- Electrically Similar to the Popular 2SA1010K transistor
Pinout of KSA1010Y
Classification of hFE
Complementary NPN transistor
Replacement and Equivalent for KSA1010Y transistor
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