KSA1010O Bipolar Transistor

Characteristics of KSA1010O Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -7 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 60 to 120
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220
  • Electrically Similar to the Popular 2SA1010L transistor

Pinout of KSA1010O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSA1010O transistor can have a current gain of 60 to 120. The gain of the KSA1010 will be in the range from 40 to 200, for the KSA1010R it will be in the range from 40 to 80, for the KSA1010Y it will be in the range from 100 to 200.

Complementary NPN transistor

The complementary NPN transistor to the KSA1010O is the KSC2334O.

Replacement and Equivalent for KSA1010O transistor

You can replace the KSA1010O with the 2SA1010, 2SA1010L, 2SA1077, BD544C, BD546C, BD712, BD744C, BD802, BD912, BDT86, BDT86F, BDT88, BDT88F, BDT96, BDT96F, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF15031 or MJF15031G.
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