2SA1010K Bipolar Transistor

Characteristics of 2SA1010K Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -7 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 100 to 200
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SA1010K

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1010K transistor can have a current gain of 100 to 200. The gain of the 2SA1010 will be in the range from 40 to 200, for the 2SA1010L it will be in the range from 60 to 120, for the 2SA1010M it will be in the range from 40 to 80.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1010K might only be marked "A1010K".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1010K is the 2SC2334K.

Replacement and Equivalent for 2SA1010K transistor

You can replace the 2SA1010K with the 2SA1077, BD544C, BD546C, BD802, BDT86, BDT86F, BDT88, BDT88F, BDT96, BDT96F, KSA1010, KSA1010Y, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF15031 or MJF15031G.
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