BD643 Bipolar Transistor
Characteristics of BD643 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 45 V
- Collector-Base Voltage, max: 45 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 8 A
- Collector Dissipation: 62.5 W
- DC Current Gain (hfe): 750
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
Pinout of BD643
Here is an image showing the pin diagram of this transistor.
Complementary PNP transistor
The complementary
PNP transistor to the BD643 is the
BD644.
Replacement and Equivalent for BD643 transistor
You can replace the BD643 with the
2N6043,
2N6043G,
2N6044,
2N6044G,
2N6387,
2N6387G,
2N6388,
2N6388G,
2N6530,
2SD1192,
2SD1277,
2SD1277-P,
2SD1277-Q,
2SD1277A,
2SD1277A-P,
2SD1277A-Q,
2SD1827,
BD645,
BD647,
BD895,
BD895A,
BD897,
BD897A,
BD899,
BD899A,
BDT63,
BDT63A,
BDT65,
BDT65A,
BDW39,
BDW40,
BDW41,
BDW41G,
BDW73,
BDW73A,
BDW73B,
BDW93,
BDW93A,
BDW93B,
BDX33,
BDX33A,
BDX33B,
BDX33BG,
BDX53,
BDX53A,
BDX53B,
BDX53BG,
TIP100,
TIP100G,
TIP101,
TIP101G,
TIP130,
TIP130G,
TIP131,
TIP131G,
TIP140T or
TIP141T.
If you find an error please send an email to mail@el-component.com