BD643 Bipolar Transistor

Characteristics of BD643 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 45 V
  • Collector-Base Voltage, max: 45 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 62.5 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BD643

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BD643 is the BD644.

Replacement and Equivalent for BD643 transistor

You can replace the BD643 with the 2N6043, 2N6043G, 2N6044, 2N6044G, 2N6387, 2N6387G, 2N6388, 2N6388G, 2N6530, 2SD1192, 2SD1277, 2SD1277-P, 2SD1277-Q, 2SD1277A, 2SD1277A-P, 2SD1277A-Q, 2SD1827, BD645, BD647, BD895, BD895A, BD897, BD897A, BD899, BD899A, BDT63, BDT63A, BDT65, BDT65A, BDW39, BDW40, BDW41, BDW41G, BDW73, BDW73A, BDW73B, BDW93, BDW93A, BDW93B, BDX33, BDX33A, BDX33B, BDX33BG, BDX53, BDX53A, BDX53B, BDX53BG, TIP100, TIP100G, TIP101, TIP101G, TIP130, TIP130G, TIP131, TIP131G, TIP140T or TIP141T.
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