BDT63 Bipolar Transistor

Characteristics of BDT63 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 10 A
  • Collector Dissipation: 90 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT63

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDT63 is the BDT62.

Replacement and Equivalent for BDT63 transistor

You can replace the BDT63 with the 2N6387, 2N6387G, 2N6388, 2N6388G, 2SD1192, 2SD1827, BDT63A, BDT63B, BDT63C, BDT65, BDT65A, BDT65B, BDT65C, BDW40, BDW41, BDW41G, BDW42, BDW42G, BDW43, MJF6388, MJF6388G, TIP140T, TIP141T or TIP142T.
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