BDT65 Bipolar Transistor

Characteristics of BDT65 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 12 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT65

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDT65 is the BDT64.

Replacement and Equivalent for BDT65 transistor

You can replace the BDT65 with the BDT65A, BDT65B, BDT65C, BDW40, BDW41, BDW41G, BDW42, BDW42G, BDW43, MJF6388 or MJF6388G.
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