BD538J Bipolar Transistor

Characteristics of BD538J Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 50 W
  • DC Current Gain (hfe): 30 to 75
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BD538J

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BD538J transistor can have a current gain of 30 to 75. The gain of the BD538 will be in the range from 40 to 0, for the BD538K it will be in the range from 40 to 100.

Complementary NPN transistor

The complementary NPN transistor to the BD538J is the BD537J.

Replacement and Equivalent for BD538J transistor

You can replace the BD538J with the 2N6491, 2N6491G, BD710, BD712, BD744B, BD744C, BD800, BD802, BD810, BD910, BD912, BDT94, BDT94F, BDT96, BDT96F, BDX78, MJF2955 or MJF2955G.
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