PBHV9115X Bipolar Transistor

Characteristics of PBHV9115X Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 0.52 W
  • DC Current Gain (hfe): 100
  • Transition Frequency, min: 115 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-89

Pinout of PBHV9115X

Here is an image showing the pin diagram of this transistor.

Marking

The PBHV9115X transistor is marked as "4G".

Complementary NPN transistor

The complementary NPN transistor to the PBHV9115X is the PBHV8115X.
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