2SB861B Bipolar Transistor

Characteristics of 2SB861B Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 60 to 120
  • Operating and Storage Junction Temperature Range: -45 to +150 °C
  • Package: TO-220

Pinout of 2SB861B

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB861B transistor can have a current gain of 60 to 120. The gain of the 2SB861 will be in the range from 60 to 200, for the 2SB861C it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB861B might only be marked "B861B".

Complementary NPN transistor

The complementary NPN transistor to the 2SB861B is the 2SD1138B.

Replacement and Equivalent for 2SB861B transistor

You can replace the 2SB861B with the 2SA1667, 2SA1668, 2SA1859, 2SA1859A, 2SB546, 2SB546A, 2SB546A-L, 2SB547, 2SB630, 2SB630-R, 2SB940, 2SB940-Q, 2SB940A, 2SB940A-Q, FJP1943, FJPF1943, KSB546, MJE15031, MJE15031G, MJE15033, MJE15033G, MJE5850, MJE5850G, MJF15031, MJF15031G or NTE398.
If you find an error please send an email to mail@el-component.com