PBHV9115T Bipolar Transistor
Characteristics of PBHV9115T Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -150 V
- Collector-Base Voltage, max: -200 V
- Emitter-Base Voltage, max: -6 V
- Collector Current − Continuous, max: -1 A
- Collector Dissipation: 0.3 W
- DC Current Gain (hfe): 100
- Transition Frequency, min: 115 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-23
Pinout of PBHV9115T
Marking
Complementary NPN transistor
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