2SB761 Bipolar Transistor

Characteristics of 2SB761 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 35 W
  • DC Current Gain (hfe): 40 to 250
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SB761

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB761 transistor can have a current gain of 40 to 250. The gain of the 2SB761-P will be in the range from 120 to 250, for the 2SB761-Q it will be in the range from 70 to 150, for the 2SB761-R it will be in the range from 40 to 90.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB761 might only be marked "B761".

Complementary NPN transistor

The complementary NPN transistor to the 2SB761 is the 2SD856.

Replacement and Equivalent for 2SB761 transistor

You can replace the 2SB761 with the 2SA1262, 2SA1488, 2SA1488A, 2SA770, 2SA771, 2SB507, 2SB633, 2SB761A, 2SB762, 2SB762A, 2SB942, 2SB942A, BD204, BD242A, BD242B, BD242C, BD244A, BD244B, BD244C, BD304, BD536, BD538, BD540A, BD540B, BD540C, BD798, BD800, BD802, BD808, BD810, BD936, BD936F, BD938, BD938F, BD940, BD940F, BD942, BD942F, BD950, BD952, BD954, BD956, BDT82, BDT82F, BDT84, BDT84F, BDT86, BDT86F, BDT88, BDT88F, BDX78, D44C10, D44C11, D44C12, D44C7, D44C8, D44C9, D45C10, D45C11, D45C12, D45C7, D45C8, D45C9, MJE15029 or MJE15029G.
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