2SB507 Bipolar Transistor

Characteristics of 2SB507 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 40 to 320
  • Transition Frequency, min: 5 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SB507

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB507 transistor can have a current gain of 40 to 320. The gain of the 2SB507C will be in the range from 40 to 80, for the 2SB507D it will be in the range from 60 to 120, for the 2SB507E it will be in the range from 100 to 200, for the 2SB507F it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB507 might only be marked "B507".

Complementary NPN transistor

The complementary NPN transistor to the 2SB507 is the 2SD313.

Replacement and Equivalent for 2SB507 transistor

You can replace the 2SB507 with the 2SA1262, 2SA1488, 2SA1488A, 2SA770, 2SA771, 2SB633, BD204, BD242A, BD242B, BD242C, BD244A, BD244B, BD244C, BD304, BD536, BD538, BD540A, BD540B, BD540C, BD798, BD800, BD802, BD808, BD810, BD950, BD952, BD954, BD956, BDT82, BDT82F, BDT84, BDT84F, BDT86, BDT86F, BDT88, BDT88F, BDX78, D44C10, D44C11, D44C12, D44C7, D44C8, D44C9, D45C10, D45C11, D45C12, D45C7, D45C8, D45C9, MJE15029 or MJE15029G.
If you find an error please send an email to mail@el-component.com