2SB762 Bipolar Transistor

Characteristics of 2SB762 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 40 to 250
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SB762

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB762 transistor can have a current gain of 40 to 250. The gain of the 2SB762-P will be in the range from 120 to 250, for the 2SB762-Q it will be in the range from 70 to 150, for the 2SB762-R it will be in the range from 40 to 90.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB762 might only be marked "B762".

Complementary NPN transistor

The complementary NPN transistor to the 2SB762 is the 2SD857.

Replacement and Equivalent for 2SB762 transistor

You can replace the 2SB762 with the 2SA1262, 2SA1488, 2SA1488A, 2SA770, 2SA771, 2SB633, 2SB762A, 2SB942, 2SB942A, BD204, BD244A, BD244B, BD244C, BD304, BD536, BD538, BD540A, BD540B, BD540C, BD798, BD800, BD802, BD808, BD810, BD950, BD952, BD954, BD956, BDT82, BDT82F, BDT84, BDT84F, BDT86, BDT86F, BDT88, BDT88F, BDX78, D44C10, D44C11, D44C12, D44C7, D44C8, D44C9, D45C10, D45C11, D45C12, D45C7, D45C8, D45C9, MJE15029 or MJE15029G.
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