2SB708-R Bipolar Transistor

Characteristics of 2SB708-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -7 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 40 to 80
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SB708-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB708-R transistor can have a current gain of 40 to 80. The gain of the 2SB708 will be in the range from 40 to 200, for the 2SB708-O it will be in the range from 60 to 120, for the 2SB708-Y it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB708-R might only be marked "B708-R".

Complementary NPN transistor

The complementary NPN transistor to the 2SB708-R is the 2SD569-M.

Replacement and Equivalent for 2SB708-R transistor

You can replace the 2SB708-R with the 2N6134, 2N6491, 2N6491G, 2SA1010, 2SA1010M, BD538, BD538K, BD710, BD712, BD744B, BD744C, BD800, BD802, BD810, BD910, BD912, BDT84, BDT84F, BDT86, BDT86F, BDT88, BDT88F, BDT94, BDT94F, BDT96, BDT96F, BDX78, KSA1010, KSA1010R, KSB708, KSB708-R, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF15031, MJF15031G, MJF2955 or MJF2955G.
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