2SB1186A-D Bipolar Transistor

Characteristics of 2SB1186A-D Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -160 V
  • Collector-Base Voltage, max: -160 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 50 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SB1186A-D

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1186A-D transistor can have a current gain of 60 to 120. The gain of the 2SB1186A will be in the range from 60 to 200, for the 2SB1186A-E it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1186A-D might only be marked "B1186A-D".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1186A-D is the 2SD1763A-E.

Replacement and Equivalent for 2SB1186A-D transistor

You can replace the 2SB1186A-D with the 2SA1006, 2SA1006-R, 2SA1006A, 2SA1006A-R, 2SA1006B, 2SA1006B-R, 2SA1011, 2SA1011D, 2SA1668, 2SA1859A, 2SA1964, 2SA1964-D, 2SB630, 2SB630-R, 2SB940A, 2SB940A-Q, FJP1943, FJPF1943, MJE15033, MJE15033G, MJE5850 or MJE5850G.
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