2SA1306B-Y Bipolar Transistor

Characteristics of 2SA1306B-Y Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -200 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 120 to 240
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SA1306B-Y

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1306B-Y transistor can have a current gain of 120 to 240. The gain of the 2SA1306B will be in the range from 70 to 240, for the 2SA1306B-O it will be in the range from 70 to 140.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1306B-Y might only be marked "A1306B-Y".

Replacement and Equivalent for 2SA1306B-Y transistor

You can replace the 2SA1306B-Y with the 2SA1006A, 2SA1006B, 2SA1668, 2SA968B, 2SA968BY, MJE15033, MJE15033G, MJE15035, MJE15035G, MJE5850, MJE5850G, MJE5851, MJE5851G, MJE5852 or MJE5852G.
If you find an error please send an email to mail@el-component.com