2SA1011D Bipolar Transistor

Characteristics of 2SA1011D Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -160 V
  • Collector-Base Voltage, max: -180 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 25 W
  • DC Current Gain (hfe): 60 to 120
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SA1011D

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1011D transistor can have a current gain of 60 to 120. The gain of the 2SA1011 will be in the range from 60 to 200, for the 2SA1011E it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1011D might only be marked "A1011D".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1011D is the 2SC2344D.

Replacement and Equivalent for 2SA1011D transistor

You can replace the 2SA1011D with the 2SA1006, 2SA1006-R, 2SA1006A, 2SA1006A-R, 2SA1006B, 2SA1006B-R, 2SA1668, 2SA1859A, 2SA1964, 2SA1964-D, 2SB1186A, 2SB1186A-D, 2SB630, 2SB630-R, 2SB940A, 2SB940A-Q, FJP1943, FJPF1943, MJE15033, MJE15033G, MJE5850 or MJE5850G.
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