KTB1369Y Bipolar Transistor

Characteristics of KTB1369Y Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -180 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 120 to 240
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of KTB1369Y

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTB1369Y transistor can have a current gain of 120 to 240. The gain of the KTB1369 will be in the range from 70 to 240, for the KTB1369O it will be in the range from 70 to 140.

Complementary NPN transistor

The complementary NPN transistor to the KTB1369Y is the KTD2061Y.

Replacement and Equivalent for KTB1369Y transistor

You can replace the KTB1369Y with the 2SA1668, 2SA1859A, 2SA1930, 2SB940A, 2SB940A-P, MJE15033, MJE15033G, MJE15035, MJE15035G, MJE5850, MJE5850G, MJE5851 or MJE5851G.
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