KTD2061Y Bipolar Transistor
Characteristics of KTD2061Y Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 180 V
- Collector-Base Voltage, max: 200 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 2 A
- Collector Dissipation: 20 W
- DC Current Gain (hfe): 120 to 240
- Transition Frequency, min: 100 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-220F
Pinout of KTD2061Y
Classification of hFE
Complementary PNP transistor
Replacement and Equivalent for KTD2061Y transistor
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