KSB810-G Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -25 V
• Collector-Base Voltage, max: -30 V
• Emitter-Base Voltage, max: -5 V
• Collector Current − Continuous, max: -0.7 A
• Collector Dissipation: 0.35 W
• DC Current Gain (h_fe): 200 to 400
• Transition Frequency, min: 160 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-92S

Here is an image showing the pin diagram of this transistor.The KSB810-G transistor can have a current gain of 200 to 400. The gain of the KSB810 will be in the range from 70 to 400, for the KSB810-O it will be in the range from 70 to 140, for the KSB810-Y it will be in the range from 120 to 240.The complementary NPN transistor to the KSB810-G is the KSD1020-G.The 2SA1588 (SOT-323), 2SA1588-GR (SOT-323), BC808 (SOT-23), BC808-25 (SOT-23), BC808-25W (SOT-323), BC808W (SOT-323), KTA1505 (SOT-23), KTA1505GL (SOT-23), KTA1505S (SOT-23) and KTA1505S-GL (SOT-23) is the SMD version of the KSB810-G transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.You can replace the KSB810-G with the 2N4953, 2N4954, 2SA1382, 2SA1680, 2SA1761, 2SA952, 2SA952-K, 2SB1116, 2SB1116-K, 2SB1229, 2SB1229-T, 2SB564, 2SB564K, 2SB598, 2SB892, 2SB892-T, 2SB985, 2SB985T, KSB1116, KSB1116-G, KSB1116S, KSB1116S-G, KSB564AC, KSB564ACG, KSB811 or KSB811-G.