2SB1116 Bipolar Transistor

Characteristics of 2SB1116 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 0.75 W
  • DC Current Gain (hfe): 135 to 600
  • Transition Frequency, min: 120 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SB1116

The 2SB1116 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1116 transistor can have a current gain of 135 to 600. The gain of the 2SB1116-K will be in the range from 200 to 400, for the 2SB1116-L it will be in the range from 135 to 270, for the 2SB1116-U it will be in the range from 300 to 600.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1116 might only be marked "B1116".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1116 is the 2SD1616.

SMD Version of 2SB1116 transistor

The 2SB1115 (SOT-89), 2SB1122 (SOT-89), FMMTA55 (SOT-23), KST55 (SOT-23), MMBTA55 (SOT-23), PZTA55 (SOT-223) and SMBTA55 (SOT-23) is the SMD version of the 2SB1116 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

2SB1116 Transistor in TO-92 Package

The KSB1116 is the TO-92 version of the 2SB1116.

Replacement and Equivalent for 2SB1116 transistor

You can replace the 2SB1116 with the KSB1116 or KSB1116S.
If you find an error please send an email to mail@el-component.com