Characteristics of 2SB1229 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -50 V
- Collector-Base Voltage, max: -60 V
- Emitter-Base Voltage, max: -6 V
- Collector Current − Continuous, max: -2 A
- Collector Dissipation: 0.75 W
- DC Current Gain (hfe): 100 to 560
- Transition Frequency, min: 150 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
Pinout of 2SB1229
The 2SB1229 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.
Classification of hFE
The 2SB1229 transistor can have a current gain of
100 to
560. The gain of the
2SB1229-R will be in the range from
100 to
200, for the
2SB1229-S it will be in the range from
140 to
280, for the
2SB1229-T it will be in the range from
200 to
400, for the
2SB1229-U it will be in the range from
280 to
560.
Marking
Sometimes the "2S" prefix is not marked on the package - the 2SB1229 might only be marked "
B1229".
Complementary NPN transistor
The complementary
NPN transistor to the 2SB1229 is the
2SD1835.
SMD Version of 2SB1229 transistor
The
2SB1122 (SOT-89) and
2SB1123 (SOT-89) is the SMD version of the 2SB1229 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.
Replacement and Equivalent for 2SB1229 transistor
You can replace the 2SB1229 with the
2SB892 or
2SB985.
If you find an error please send an email to mail@el-component.com