KSB810-O Bipolar Transistor

Characteristics of KSB810-O Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -25 V
  • Collector-Base Voltage, max: -30 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.7 A
  • Collector Dissipation: 0.35 W
  • DC Current Gain (hfe): 70 to 140
  • Transition Frequency, min: 160 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92S

Pinout of KSB810-O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSB810-O transistor can have a current gain of 70 to 140. The gain of the KSB810 will be in the range from 70 to 400, for the KSB810-G it will be in the range from 200 to 400, for the KSB810-Y it will be in the range from 120 to 240.

SMD Version of KSB810-O transistor

The 2SA1182 (SOT-23), 2SA1182-O (SOT-23), 2SA1588 (SOT-323), 2SA1588-O (SOT-323), FJX1182 (SOT-323), FJX1182-O (SOT-323), KSA1182 (SOT-23), KSA1182-O (SOT-23), KTA1505 (SOT-23), KTA1505O (SOT-23), KTA1505S (SOT-23) and KTA1505S-O (SOT-23) is the SMD version of the KSB810-O transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for KSB810-O transistor

You can replace the KSB810-O with the 2N4951, 2N4954, 2SA1020, 2SA1020O, 2SB598, 2SB764, KSB564AC, KSB564ACO, KSB811, KSB811-O, KTA1281, KTA1281O or KTB764.
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