KSB1116S Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -50 V
• Collector-Base Voltage, max: -60 V
• Emitter-Base Voltage, max: -6 V
• Collector Current − Continuous, max: -1 A
• Collector Dissipation: 0.75 W
• DC Current Gain (h_fe): 135 to 600
• Transition Frequency, min: 120 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-92

The KSB1116S is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.The KSB1116S transistor can have a current gain of 135 to 600. The gain of the KSB1116S-G will be in the range from 200 to 400, for the KSB1116S-L it will be in the range from 300 to 600, for the KSB1116S-Y it will be in the range from 135 to 270.The 2SB1115 (SOT-89), 2SB1122 (SOT-89), FMMTA55 (SOT-23), KST55 (SOT-23), MMBTA55 (SOT-23), PZTA55 (SOT-223) and SMBTA55 (SOT-23) is the SMD version of the KSB1116S transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.You can replace the KSB1116S with the 2SB1116 or KSB1116.