KSB811-G Bipolar Transistor

Characteristics of KSB811-G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -25 V
  • Collector-Base Voltage, max: -30 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 0.35 W
  • DC Current Gain (hfe): 200 to 400
  • Transition Frequency, min: 110 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92S

Pinout of KSB811-G

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSB811-G transistor can have a current gain of 200 to 400. The gain of the KSB811 will be in the range from 70 to 400, for the KSB811-O it will be in the range from 70 to 140, for the KSB811-Y it will be in the range from 120 to 240.

Complementary NPN transistor

The complementary NPN transistor to the KSB811-G is the KSD1021-G.

SMD Version of KSB811-G transistor

The 2SA1588 (SOT-323), 2SA1588-GR (SOT-323), BC808 (SOT-23), BC808-25 (SOT-23), BC808-25W (SOT-323), BC808W (SOT-323), FMMT549A (SOT-23), KTA1505 (SOT-23), KTA1505GL (SOT-23), KTA1505S (SOT-23) and KTA1505S-GL (SOT-23) is the SMD version of the KSB811-G transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for KSB811-G transistor

You can replace the KSB811-G with the 2N4953, 2N4954, 2SA1382, 2SA1680, 2SA1761, 2SB1116, 2SB1116-K, 2SB1229, 2SB1229-T, 2SB564, 2SB564K, 2SB598, 2SB892, 2SB892-T, 2SB985, 2SB985T, KSB1116, KSB1116-G, KSB1116S, KSB1116S-G, KSB564AC or KSB564ACG.
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