2SB1116-K Bipolar Transistor

Characteristics of 2SB1116-K Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 0.75 W
  • DC Current Gain (hfe): 200 to 400
  • Transition Frequency, min: 120 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SB1116-K

The 2SB1116-K is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1116-K transistor can have a current gain of 200 to 400. The gain of the 2SB1116 will be in the range from 135 to 600, for the 2SB1116-L it will be in the range from 135 to 270, for the 2SB1116-U it will be in the range from 300 to 600.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1116-K might only be marked "B1116-K".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1116-K is the 2SD1616-K.

SMD Version of 2SB1116-K transistor

The 2SB1115 (SOT-89), 2SB1115-YL (SOT-89), 2SB1122 (SOT-89), 2SB1122-T (SOT-89), 2STR2160 (SOT-23), FMMTA55 (SOT-23), KST55 (SOT-23), MMBT4354 (SOT-23), MMBT4355 (SOT-23), MMBTA55 (SOT-23), PZTA55 (SOT-223) and SMBTA55 (SOT-23) is the SMD version of the 2SB1116-K transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

2SB1116-K Transistor in TO-92 Package

The KSB1116-G is the TO-92 version of the 2SB1116-K.

Replacement and Equivalent for 2SB1116-K transistor

You can replace the 2SB1116-K with the 2SA1382, 2SA1680, 2SA1761, 2SB1116A, 2SB1116A-K, 2SB1229, 2SB1229-T, 2SB892, 2SB892-T, 2SB985, 2SB985T, KSB1116, KSB1116-G, KSB1116A, KSB1116A-G, KSB1116S or KSB1116S-G.
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