Characteristics of 2SB1116-K Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -50 V
- Collector-Base Voltage, max: -60 V
- Emitter-Base Voltage, max: -6 V
- Collector Current − Continuous, max: -1 A
- Collector Dissipation: 0.75 W
- DC Current Gain (hfe): 200 to 400
- Transition Frequency, min: 120 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
Pinout of 2SB1116-K
The 2SB1116-K is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.
Classification of hFE
The 2SB1116-K transistor can have a current gain of
200 to
400. The gain of the
2SB1116 will be in the range from
135 to
600, for the
2SB1116-L it will be in the range from
135 to
270, for the
2SB1116-U it will be in the range from
300 to
600.
Marking
Sometimes the "2S" prefix is not marked on the package - the 2SB1116-K might only be marked "
B1116-K".
Complementary NPN transistor
The complementary
NPN transistor to the 2SB1116-K is the
2SD1616-K.
SMD Version of 2SB1116-K transistor
The
2SB1115 (SOT-89),
2SB1115-YL (SOT-89),
2SB1122 (SOT-89),
2SB1122-T (SOT-89),
2STR2160 (SOT-23),
FMMTA55 (SOT-23),
KST55 (SOT-23),
MMBT4354 (SOT-23),
MMBT4355 (SOT-23),
MMBTA55 (SOT-23),
PZTA55 (SOT-223) and
SMBTA55 (SOT-23) is the SMD version of the 2SB1116-K transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.
2SB1116-K Transistor in TO-92 Package
The
KSB1116-G is the TO-92 version of the 2SB1116-K.
Replacement and Equivalent for 2SB1116-K transistor
You can replace the 2SB1116-K with the
2SA1382,
2SA1680,
2SA1761,
2SB1116A,
2SB1116A-K,
2SB1229,
2SB1229-T,
2SB892,
2SB892-T,
2SB985,
2SB985T,
KSB1116,
KSB1116-G,
KSB1116A,
KSB1116A-G,
KSB1116S or
KSB1116S-G.
If you find an error please send an email to mail@el-component.com