KSB810 Bipolar Transistor

Characteristics of KSB810 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -25 V
  • Collector-Base Voltage, max: -30 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.7 A
  • Collector Dissipation: 0.35 W
  • DC Current Gain (hfe): 70 to 400
  • Transition Frequency, min: 160 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92S

Pinout of KSB810

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSB810 transistor can have a current gain of 70 to 400. The gain of the KSB810-G will be in the range from 200 to 400, for the KSB810-O it will be in the range from 70 to 140, for the KSB810-Y it will be in the range from 120 to 240.

Complementary NPN transistor

The complementary NPN transistor to the KSB810 is the KSD1020.

SMD Version of KSB810 transistor

The 2SA1588 (SOT-323), KTA1505 (SOT-23) and KTA1505S (SOT-23) is the SMD version of the KSB810 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for KSB810 transistor

You can replace the KSB810 with the 2N4954, 2SB598, KSB564AC or KSB811.
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