KSB811 Bipolar Transistor

Characteristics of KSB811 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -25 V
  • Collector-Base Voltage, max: -30 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 0.35 W
  • DC Current Gain (hfe): 70 to 400
  • Transition Frequency, min: 110 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92S

Pinout of KSB811

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSB811 transistor can have a current gain of 70 to 400. The gain of the KSB811-G will be in the range from 200 to 400, for the KSB811-O it will be in the range from 70 to 140, for the KSB811-Y it will be in the range from 120 to 240.

Complementary NPN transistor

The complementary NPN transistor to the KSB811 is the KSD1021.

SMD Version of KSB811 transistor

The 2SA1588 (SOT-323), KTA1505 (SOT-23) and KTA1505S (SOT-23) is the SMD version of the KSB811 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for KSB811 transistor

You can replace the KSB811 with the 2N4954, 2SB598 or KSB564AC.
If you find an error please send an email to mail@el-component.com