KSB1116 Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -50 V
• Collector-Base Voltage, max: -60 V
• Emitter-Base Voltage, max: -6 V
• Collector Current − Continuous, max: -1 A
• Collector Dissipation: 0.75 W
• DC Current Gain (h_fe): 135 to 600
• Transition Frequency, min: 120 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-92
• Electrically Similar to the Popular 2SB1116 transistor

The KSB1116 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.The KSB1116 transistor can have a current gain of 135 to 600. The gain of the KSB1116-G will be in the range from 200 to 400, for the KSB1116-L it will be in the range from 300 to 600, for the KSB1116-Y it will be in the range from 135 to 270.The complementary NPN transistor to the KSB1116 is the KSD1616.The 2SB1115 (SOT-89), 2SB1122 (SOT-89), FMMTA55 (SOT-23), KST55 (SOT-23), MMBTA55 (SOT-23), PZTA55 (SOT-223) and SMBTA55 (SOT-23) is the SMD version of the KSB1116 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.The 2SB1116 is the TO-92 version of the KSB1116.You can replace the KSB1116 with the 2SB1116 or KSB1116S.