KSB1366-G Bipolar Transistor

Characteristics of KSB1366-G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 25 W
  • DC Current Gain (hfe): 150 to 320
  • Transition Frequency, min: 9 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of KSB1366-G

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSB1366-G transistor can have a current gain of 150 to 320. The gain of the KSB1366 will be in the range from 100 to 320, for the KSB1366-Y it will be in the range from 100 to 200.

Complementary NPN transistor

The complementary NPN transistor to the KSB1366-G is the KSD2012-G.

SMD Version of KSB1366-G transistor

The BDP950 (SOT-223) is the SMD version of the KSB1366-G transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for KSB1366-G transistor

You can replace the KSB1366-G with the 2SA1262, 2SA1488, 2SA1488A, 2SA1634, 2SA1635, 2SA1742, 2SA1743, 2SA1744, 2SA770, 2SA771, 2SB1187, 2SB1375, 2SB1565, 2SB507, 2SB633, 2SB858, BD204, BD242A, BD242B, BD242C, BD244A, BD244B, BD244C, BD304, BD536, BD538, BD540A, BD540B, BD540C, BD544A, BD544B, BD544C, BD546A, BD546B, BD546C, BD798, BD800, BD802, BD808, BD810, BD950, BD952, BD954, BD956, BDT82, BDT82F, BDT84, BDT84F, BDT86, BDT86F, BDT88, BDT88F, BDX78, D44C10, D44C11, D44C12, D44C7, D44C8, D44C9, D45C10, D45C11, D45C12, D45C7, D45C8, D45C9, D45H11, D45H11FP, D45H8, MJE15029 or MJE15029G.
If you find an error please send an email to mail@el-component.com