BD676G Bipolar Transistor

Characteristics of BD676G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -45 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126
  • The BD676G is the lead-free version of the BD676 transistor

Pinout of BD676G

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BD676G is the BD675G.

Replacement and Equivalent for BD676G transistor

You can replace the BD676G with the 2N6035, 2N6035G, 2N6036, 2N6036G, BD676, BD676A, BD676AG, BD678, BD678A, BD678AG, BD678G, BD680, BD680A, BD680AG, BD680G, BD776, BD778, BD780, KSE700, KSE701, KSE702, KSE703, MJE700, MJE700G, MJE701, MJE701G, MJE702, MJE702G, MJE703 or MJE703G.
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