BD676AG Bipolar Transistor

Characteristics of BD676AG Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -45 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126
  • The BD676AG is the lead-free version of the BD676A transistor

Pinout of BD676AG

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BD676AG is the BD675AG.

Replacement and Equivalent for BD676AG transistor

You can replace the BD676AG with the 2N6035, 2N6035G, 2N6036, 2N6036G, BD676, BD676A, BD676G, BD678, BD678A, BD678AG, BD678G, BD680, BD680A, BD680AG, BD680G, BD776, BD778, BD780, KSE700, KSE701, KSE702, KSE703, MJE700, MJE700G, MJE701, MJE701G, MJE702, MJE702G, MJE703 or MJE703G.
If you find an error please send an email to mail@el-component.com