BD676AG Bipolar Transistor
Characteristics of BD676AG Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -45 V
- Collector-Base Voltage, max: -45 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -4 A
- Collector Dissipation: 40 W
- DC Current Gain (hfe): 750
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-126
- The BD676AG is the lead-free version of the BD676A transistor
Pinout of BD676AG
Complementary NPN transistor
Replacement and Equivalent for BD676AG transistor
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