BD675G Bipolar Transistor
Characteristics of BD675G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 45 V
- Collector-Base Voltage, max: 45 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 4 A
- Collector Dissipation: 40 W
- DC Current Gain (hfe): 750
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-126
- The BD675G is the lead-free version of the BD675 transistor
Pinout of BD675G
Complementary PNP transistor
Replacement and Equivalent for BD675G transistor
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