BD676A Bipolar Transistor

Characteristics of BD676A Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -45 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of BD676A

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

BD676A equivalent circuit

Complementary NPN transistor

The complementary NPN transistor to the BD676A is the BD675A.

Replacement and Equivalent for BD676A transistor

You can replace the BD676A with the 2N6035, 2N6035G, 2N6036, 2N6036G, BD676, BD676AG, BD676G, BD678, BD678A, BD678AG, BD678G, BD680, BD680A, BD680AG, BD680G, BD776, BD778, BD780, KSE700, KSE701, KSE702, KSE703, MJE700, MJE700G, MJE701, MJE701G, MJE702, MJE702G, MJE703 or MJE703G.

Lead-free Version

The BD676AG transistor is the lead-free version of the BD676A.
If you find an error please send an email to mail@el-component.com